| PART |
Description |
Maker |
| RJK4532DPH-E0 |
450V - 4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0391DPA RJK0391DPA-00-J5A RJK0391DPA-13 RJK0391 |
N Channel Power MOS FET High Speed Power Switching
30V, 50A, 2.9m?max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0456DPB RJK0456DPB13 RJK0456DPB-00-J5 |
40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT20M42HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 50A 0.042 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| 2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2053 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS type field effect transistor
|
NEC[NEC]
Toshiba Semiconductor
|
| PS7360-1A PS7360L-1A PS7360L-1A-E3 PS7360L-1A-E4 |
6-PIN DIP / HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET 6引脚DIP，高隔离电压1通道光学耦合场效应晶体管
Solid State Relay(固态继电器)
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
